1 composite transistors XP05531 silicon npn epitaxial planer transistor for high frequency, oscillation and mixing features high transition frequency f t . small collector output capacitance c ob and reverse transfer ca- pacitance c rb . two elements incorporated into one package. basic part number of element 2sc3130 2 elements absolute maximum ratings (ta=25?c) unit: mm marking symbol: 5m internal connection parameter symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 3v collector current i c 50 ma total power dissipation p t 150 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c rating of element overall electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector to emitter voltage v ceo i c = 2ma, i b = 0 10 v emitter to base voltage v ebo i e = 10 a, i c = 0 3v collector cutoff current i cbo v cb = 10v, i e = 0 1 a i ceo v ce = 10v, i b = 0 10 a forward current transfer ratio h fe1 v ce = 4v, i c = 5ma 75 400 h fe2 /h fe1 ratio h fe2 /h fe1 v ce = 4v, i c = 100 a 0.75 1.6 v ce = 4v, i c = 5ma collector to emitter saturation voltage v ce(sat) i c = 20ma, i b = 4ma 0.5 v transition frequency f t v cb = 4v, i e = C5ma, f = 200mhz 1.4 1.9 2.5 ghz collector output capacitance c ob v cb = 4v, i e = 0, f = 1mhz 0.9 1.1 pf common base reverse transfer capacitance c rb v cb = 4v, i e = 0, f = 1mhz 0.25 0.35 pf collector to base parameter r bb .c c v cb = 4v, i e = C5ma, f = 31.9mhz 11.8 13.5 ps 16 5 tr2 tr1 2 34 1 : emitter (tr1) 4 : collector (tr2) 2 : base (tr1) 5 : emitter (tr2) 3 : base (tr2) 6 : collector (tr1) eiaj : scC88 smini6-g1 package 5 10 2.1 0.1 1.25 0.10 1 3 2 0.2 0.05 0.12 +0.05 ?0.02 0.2 0.1 (0.425) 1.3 0.1 2.0 0.1 0 to 0.1 0.9 0.1 0.9 +0.2 ?0.1 6 5 4 (0.65) (0.65)
2 composite transistors XP05531 p t ta i c v ce i c v be v ce(sat) i c h fe i c f t i e c ob v cb 0 40 80 120 160 200 180 140 100 60 20 02040 80 60 140 120 100 160 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) 0 012 210 48 6 20 60 40 80 collector current i c ( ma ) collector to emitter voltage v ce ( v ) ta=25?c 400 a 300 a 200 a 100 a i b =500 a 0 02.0 1.6 1.2 0.8 0.4 60 50 40 30 20 10 base to emitter voltage v be ( v ) collector current i c ( ma ) v ce =4v ta=75?c C25?c 25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 0.1 0.3 360 300 240 180 120 60 1 3 10 30 100 forward current transfer ratio h fe collector current i c ( ma ) v ce =4v ta=75?c 25?c C25?c 0 C0.1 C0.3 1.0 2.0 3.0 4.0 3.5 2.5 1.5 0.5 C1 C3 C10 C30 C100 transition frequency f t ( ghz ) emitter current i e ( ma ) v cb =4v ta=25?c 0 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c
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